| سال | هفته | ID | Title | ApplNo | IPC | Applicant | Subgroup | زیر گروه | رشته | شرح | Description |
|---|
2026 | 03 | WO/2026/013117 | METHOD FOR PRODUCING MONATOMIC FLUORINE FOR THE FLUORINATION OF TARGET MATERIALS AND APPARATUS THEREOF | EP2025/069560 | C30B 29/02 | CONSIGLIO NAZIONALE DELLE RICERCHE | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 03 | WO/2026/013718 | BETA-DIGALLIUM TRIOXIDE SINGLE CRYSTAL SUBSTRATE, METHOD FOR MANUFACTURING BETA-DIGALLIUM TRIOXIDE SINGLE CRYSTAL, AND METHOD FOR MANUFACTURING BETA-DIGALLIUM TRIOXIDE SINGLE CRYSTAL SUBSTRATE | JP2024/024580 | C30B 29/16 | SUMITOMO ELECTRIC INDUSTRIES, LTD. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 03 | WO/2026/013719 | BETA DIGALLIUM TRIOXIDE SINGLE-CRYSTAL SUBSTRATE, METHOD FOR MANUFACTURING BETA DIGALLIUM TRIOXIDE SINGLE CRYSTAL, AND METHOD FOR MANUFACTURING BETA DIGALLIUM TRIOXIDE SINGLE-CRYSTAL SUBSTRATE | JP2024/024581 | C30B 29/16 | SUMITOMO ELECTRIC INDUSTRIES, LTD. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 03 | WO/2026/014056 | INDIUM PHOSPHIDE SUBSTRATE AND SEMICONDUCTOR EPITAXIAL WAFER | JP2025/017903 | C30B 29/40 | JX ADVANCED METALS CORPORATION | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 03 | WO/2026/014251 | EPITAXIAL WAFER | JP2025/022970 | C30B 29/06 | SHIN-ETSU HANDOTAI CO., LTD. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 03 | WO/2026/015409 | MAGNET RAMP PROFILES DURING SINGLE CRYSTAL SILICON GROWTH | US2025/036560 | C30B 15/30 | GLOBALWAFERS CO., LTD. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 03 | WO/2026/015571 | SYSTEMS AND METHODS FOR ADDING DOPANT TO AN INGOT PULLER APPARATUS | US2025/036863 | C30B 15/04 | GLOBALWAFERS CO., LTD. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی |